发明名称 BI-DIRECTIONAL ESD PROTECTION CIRCUIT
摘要 <p>An electrostatic discharge (ESD) device for protecting an input/output terminal of a circuit, the device comprising a first transistor with an integrated silicon-controlled rectifier (SCR) coupled between the input/output (I/O) terminal of the circuit and a node and a second transistor with an integrated silicon-controlled rectifier coupled between the node and a negative terminal of a supply voltage, wherein the silicon-controlled rectifier of the first transistor triggers in response to a negative ESD voltage and the silicon-controlled rectifier of the second transistor triggers in response to a positive ESD voltage.</p>
申请公布号 EP1794795(A4) 申请公布日期 2010.07.14
申请号 EP20050791784 申请日期 2005.08.26
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 PAULETTI, TIMOTHY, PATRICK;PENDHARKER, SAMEER;CHEN, WAYNE, TIEN-FENG;BRODSKY, JONATHAN;STEINHOFF, ROBERT
分类号 H01L23/62;H01L29/76 主分类号 H01L23/62
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