| 摘要 |
PURPOSE: A method for fabricating a metal wiring is provided to improve the reliability of a semiconductor device by successively forming metal films for a metal wiring, a barrier, and a metal plug and subsequently forming the metal plug and the metal wiring through one etching process. CONSTITUTION: Metal films for a metal wiring, a barrier, and a metal plug are successively formed on a semiconductor substrate. A first hard mask is formed to define the metal wiring on the upper side of the metal film for the metal plug. A second hard mask is formed to define the metal plug on the upper side of the first hard mask. An etching process is performed using the first and the second hard masks as an etching mask, and the metal plug, a patterned barrier(204a) and the metal wiring(202a) are formed. An interlayer insulating film(212) is formed to fill the metal plug.
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