| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device of high reliability, and a manufacturing method thereof. <P>SOLUTION: The semiconductor device is provided with a gate electrode, a gate insulating film provided on the gate electrode, a semiconductor film provided on the gate insulating film and comprises a source region and a drain region, wiring or an electrode electrically connected to the source region or the drain region, a first insulating film provided on the wiring or the electrode so as to have a first opening part, a second insulating film provided on the first insulating film so as to have a second opening part and a pixel electrode provided on the second insulating film. The first insulating film is constituted of a laminated inorganic insulating film comprising a silicon nitride film while the second insulating film is constituted of an organic insulating film and the upper surface of the first insulating film is provided with an exposed part which is not covered by the second insulating film in the bottom surface of the second opening part of the second insulating film. The inner wall surface of the second insulating film is provided with a protruded curved surface in the cross-section of the second opening part of the second insulating film. The pixel electrode is electrically connected to the wiring or the electrode through the first opening part and the second opening part. <P>COPYRIGHT: (C)2010,JPO&INPIT |
