| 摘要 |
PURPOSE: A back side optical receiving image sensor and a manufacturing method thereof are provided to maximize the intensity of incident radiation while minimizing the stack in the upper part of the optical receiving part by forming a readout circuit in the upper part of an optical sensor. CONSTITUTION: A first substrate comprises an element isolation region and a pixel region. An optical sensor(120) is formed by differentiating the depth of the front side of the first substrate. An epi layer is formed in the front side of the first substrate in which the optical sensor is formed. A readout circuitry(150) is formed in the front side of the epi layer. An interlayer insulating layer and a wiring(170) are formed on the front side of the epi layer. A micro lens(190) is formed on the optical sensor of the back side of the first substrate.
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