发明名称 METHOD FOR FABRICATING A SEMICONDUCTOR
摘要 <p>PURPOSE: A method for manufacturing a semiconductor device is provided to increase the efficiency of equipment use by performing an etching process for opening a pad part and a cleaning process for removing remaining foreign materials on the pad part. CONSTITUTION: A semiconductor substrate with a pad part for a wire bonding is loaded on a chamber(S200). The semiconductor substrate is unloaded after the pad part is open by an etching process(S202). A chamber is cleaned(S204). The semiconductor substrate with the open pad part is loaded on the chamber(S206). The semiconductor substrate is unloaded after the remaining foreign materials are removed on the open pad part by a plasma process(S208).</p>
申请公布号 KR20100078005(A) 申请公布日期 2010.07.08
申请号 KR20080136106 申请日期 2008.12.29
申请人 DONGBU HITEK CO., LTD. 发明人 CHOI, JIN SIK
分类号 H01L21/302;H01L21/304;H01L21/60 主分类号 H01L21/302
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