发明名称 IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: An image sensor and a method for manufacturing the same are provided to prevent the contact failure in the pad region of a metal thin film layer by depositing a metal layer, which is composed of a titanium nitride, in the pad region. CONSTITUTION: A planarized oxide film(100) with a contact(110), which is formed in a via, is formed on a substrate. A first metal layer is deposited on a region of the oxide film excluding a contact formed region. A second metal layer(300) is formed on the contact formed region. The first metal layer includes titanium. The second metal layer includes either of a titanium nitride or a titanium nitride alloy. An aluminum layer is deposited on the second metal layer.
申请公布号 KR20100078364(A) 申请公布日期 2010.07.08
申请号 KR20080136610 申请日期 2008.12.30
申请人 DONGBU HITEK CO., LTD. 发明人 CHA, SEUNG WON
分类号 H01L27/146;H01L27/14 主分类号 H01L27/146
代理机构 代理人
主权项
地址
您可能感兴趣的专利