| 摘要 |
PURPOSE: A manufacturing method of a semiconductor device is provided to simplify a manufacturing process by forming a salicide layer after forming an inter-layer insulating layer. CONSTITUTION: A gate electrode(16) is formed on the active area of a semiconductor substrate(10). A source/drain region(20) is formed in both sides of the gate electrode. An inter-layer insulating layer(22) is formed in the front side of the semiconductor substrate. A contact hole is formed by etching the predetermined region of the inter-layer insulating layer. The contact hole exposes the source/drain region. A conductive layer is formed in the front side of the inter-layer insulating layer including the contact hole. A salicide layer(28) is formed in the source/drain region by executing an annealing process for the conductive layer. A contact plug(30) is formed by filling the contact hole with a tungsten layer.
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