发明名称 Insulating film for semiconductor integrated circuit
摘要 The present invention relates to a polymeric compound comprising, as structural units, groups each represented by the following general formula (1); and an insulating film for a semiconductor integrated circuit which comprises the polymeric compound: —R1—C≡C—C≡C—, wherein R1 represents a group having a cage-shaped structure. The insulating film has a high heat resistance, a high mechanical strength and a low dielectric constant. In addition, the insulating film has a high stability of its dielectric constant with the elapse of time. Furthermore, the present invention can provide an interlayer insulating film for electronic devices having a high heat resistance, a high mechanical strength and a low dielectric constant which can be maintained over an extremely long period of time as well as an electronic device whose layer structure is provided with such an insulating film as a constituent thereof.
申请公布号 US7750102(B2) 申请公布日期 2010.07.06
申请号 US20080026865 申请日期 2008.02.06
申请人 FUJIFILM CORPORATION 发明人 WATANABE YASUFUMI;WATANABE KATSUYUKI
分类号 C08F38/00;C08F4/80 主分类号 C08F38/00
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