| 摘要 |
PURPOSE: A method for forming metal wiring in a semiconductor device is provided to obtain a tungsten barrier film with superior step coverage by employing a metal layer deposited previously as the barrier film for a via hole. CONSTITUTION: An inter-layer insulating film(100) and lower metal wiring(102) are formed on the top of a semiconductor substrate. A barrier layer is formed on the top of the lower metal wiring. A metal layer is formed on the top of the barrier layer. A via hole is formed by pattern-etching the metal layer. Tungsten(116) is deposited within the via hole.
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