MOS transistors having recessed channel regions and methods of fabricating the same

摘要

A MOS transistor having a recessed channel region is provided. A MOS transistor includes a source region and a drain region disposed in an active region of a semiconductor substrate and spaced apart from each other. A gate trench structure is disposed in the active region between the source and drain regions. A gate electrode is disposed in the gate trench structure. A gate dielectric layer is interposed between the gate trench structure and the gate electrode. A semiconductor region is disposed between the gate trench structure and the gate dielectric layer. The semiconductor region is formed of a different material from the active region. A method of fabricating the MOS transistor having a recessed channel region is also provided.