| 摘要 |
A method for manufacturing a solid state image pickup device in which a semiconductor substrate includes a pixel region where a plurality of pixels are arranged, each pixel including a signal charge accumulating portion and a transistor, and a pixel well of a first conductive type shared by the respective pixels, the method comprising: (a) a first step of forming a first impurity doped region by ion-implanting an impurity of the first conductive type to a surface of the semiconductor substrate together with the pixel well at a surface density of 1×1014 cm−2 or less in total; (b) a second step of forming an interlayer film after the first step; (c) a third step of forming a hole for providing a contact electrode in the interlayer film on the first impurity doped region; (d) a fourth step of forming a contact portion by ion-implanting an impurity of the first conductive type through the hole; and (e) a fifth step of forming the contact electrode by filling the hole.
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