| 摘要 |
<p>PURPOSE: An image sensor and a manufacturing method thereof are provided to prevent a signal noise due to a multi-stage plug by simplifying a plug structure. CONSTITUTION: A trench is formed in a semiconductor substrate(100). A first reflective unit has an incline which makes a curvature with the trench. A second reflective unit fills the trench on the first reflective unit. A photodiode(120) with a vertical structure is formed on the semiconductor substrate between the trenches. The trench is formed on a P type epitaxial layer with the photo diode.</p> |
