EPITAXIAL WAFER AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: An epitaxial wafer and a manufacturing method thereof are provided to prevent a bowing phenomenon by forming a back seal layer with a tensile stress film. CONSTITUTION: A substrate(201) is doped with a first doping density. An epi layer(202) is formed on the upper side of a substrate and is doped with a second doping density lower than the first doping density. A back seal layer(203) is formed on the rear of the substrate and includes a poly silicon layer and a silicon nitride layer. The poly silicon layer is formed on the rear of the substrate. The silicon nitride layer is formed on the upper side of the poly silicon layer.