发明名称 POLISHING PAD FOR CHEMICAL-MECHANICAL POLISHING
摘要 PURPOSE: A grinding pad for chemical mechanical polishing is provided to increase a service life of a grinding pad by removing bubble using grooves. CONSTITUTION: A grinding pad for chemical mechanical polishing comprises an upper pad(310) and a bottom pad(320). Grooves(330) are formed in the upper side of the upper pad to the constant interval. The bottom pad is bonded with the lower-part of the upper pad. A hole is formed on the lower-part of the bottom pad at a fixed interval. When the pad is connected to the platen, the groove prevents bubbles.
申请公布号 KR20100073095(A) 申请公布日期 2010.07.01
申请号 KR20080131682 申请日期 2008.12.22
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHOI, JAE GON
分类号 B24B37/26;B24D3/00;H01L21/304 主分类号 B24B37/26
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