| 摘要 |
<p>Provided are a high electron mobility transistor (hetero-junction electrolytic transistor) with low access resistance, on resistance, or the like, a method for producing the high electron mobility transistor, and an electronic device. The high electron mobility transistor characterized in that an electron transit layer (11) is formed by a group-? nitride semiconductor on a substrate (10), an electron supply layer (12) formed from the group-? nitride semiconductor is joined to the upper surface of the electron transit layer (11) in terms of hetero-junction, and a gate electrode (14), a source electrode (15A), and a drain electrode (15B) are disposed on the electron supply layer (12), that n-type conductive layer regions (13A, 13B) which extend from the upper part of the electron transit layer (11) to the upper surface of the electron supply layer (12) are provided in at least a part below the source electrode (15A) and the drain electrode (15B), and that the hetero-junction interface with the electron supply layer (12) contains n-type impurities at a concentration of 1 × 1020 cm-3 or more in the electron transit layer (11) part of the n-type conductive layer regions (13A, 13B).</p> |
