| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an etching method and an etching apparatus, capable of uniformly etching a wafer. Ž<P>SOLUTION: In the etching method for etching the wafer 80, an etching gas is supplied toward one surface of the wafer 80 where a plurality of communicating holes communicating the front and the back are formed, and at least a part of the supplied etching gas is discharged from the plurality of communicating holes to the other surface side. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
