| 摘要 |
PURPOSE: A capacitor and a method of manufacturing the same are provided to secure capacitance higher than planar capacitor by forming a bottom electrode, an insulating layer, and top electrode in uneven shape. CONSTITUTION: An interlayer dielectric layer(220) having uneven structures on a semiconductor substrate(210) is formed. A bottom electrode(225) having the uneven structure corresponding to the interlayer dielectric layer by depositing the metal material on the interlayer dielectric layer. A top electrode(240) having the uneven structure corresponding to the interlayer dielectric layer by depositing the metal layer on the surface of the insulating layer.
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