| 发明名称 |
Method and Composition for Chemical Mechanical Planarization of A Metal or A Metal Alloy |
| 摘要 |
A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of metal removal as well as low dishing and erosion levels during CMP processing.
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| 申请公布号 |
US2010167546(A1) |
申请公布日期 |
2010.07.01 |
| 申请号 |
US20090632918 |
申请日期 |
2009.12.08 |
| 申请人 |
DOPONT AIR PRODUCTS NANOMATERIALS LLC |
发明人 |
SHI XIAOBO;PALMER BENTLEY J.;SAWAYDA REBECCA A. |
| 分类号 |
H01L21/302;C09K13/06 |
主分类号 |
H01L21/302 |
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