发明名称 |
Semiconductor device having deep through vias |
摘要 |
<p>A semiconductor device includes a body (1) and, in the body (1): a semiconductor substrate (2), a semiconductor structural layer (10) and a dielectric layer (12) therebetween. A through interconnection via (30) traverses the body (1) and extends through the dielectric layer (12). The through interconnection via (30) has: a front-side interconnection region (17), including a portion of the structural layer (10) that extends between the dielectric layer (12) and a front face (10a) of the body (1) and is laterally insulated from the remainder of the structural layer (10); a back-side interconnection region (27), including a portion of the substrate (2) that extends between the dielectric layer (12) and a back face (2a) of the body (1) and is laterally insulated from the remainder of the substrate (2) by a back-side insulation trench (29). The back-side insulation trench (29) extends across the entire substrate (2; 102; 202), from the back face (2a) of the body (1) to the dielectric layer (12) the; and a conductive continuity region (8) connecting the front-side interconnection region (17) and the back-side interconnection region (27) through the dielectric layer (12).</p> |
申请公布号 |
EP2202791(A2) |
申请公布日期 |
2010.06.30 |
申请号 |
EP20100160512 |
申请日期 |
2005.11.16 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
MARCHI, MAURO;FERRERA, MARCO;RIVA, CATERINA |
分类号 |
H01L23/48;B81B7/00;H01L21/762;H01L21/768 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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