发明名称 ESD protective circuit having low leakage current
摘要 An ESD protective circuit having a contact terminal, a first supply voltage terminal for a first supply potential, a second supply voltage terminal for a second supply potential, a transistor chain having several transistors, wherein drain terminals of the transistors are connected to one of the supply voltage terminals, wherein the control terminal of a first transistor of the transistor chain is connected to the other supply voltage terminal, wherein the source terminal of the last transistor of the transistor chain is connected to the contact terminal, and a current source which is connected to a source terminal of at least one of the transistors of the transistor chain and is able to provide a current which compensates, up to a maximum tolerable voltage deviation from the first or second supply potential at the contact terminal, a current flowing into or from the source terminal.
申请公布号 US7746611(B2) 申请公布日期 2010.06.29
申请号 US20070837369 申请日期 2007.08.10
申请人 INFINEON TECHNOLOGIES AG 发明人 HAMMERSCHMIDT DIRK
分类号 H02H9/00 主分类号 H02H9/00
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