| 摘要 |
<p>PURPOSE: A semiconductor device is provided to realize miniaturization of the semiconductor device by reducing an occupied area of the area which a circuit is formed. CONSTITUTION: Although a high potential logic area is surrounded, an RESURF(Reduced SURface Field) domain(24) is formed by lying an isolation area. The high potential logic area includes sense resistance(9) and the first logic circuit. In the outside of the RESURF domain, the second logic circuit area which a driving voltage level necessary for driving the second logic circuit is applied is formed. In the RESURF domain, drain electrode of a field effect transistor is formed according to inner circumference and source electrode is formed according to outer circumference.</p> |
