发明名称 PRODUCTION METHOD OF FERROELECTRIC CRYSTAL HAVING BISMUTH LAYERED STRUCTURE
摘要 <P>PROBLEM TO BE SOLVED: To provide a production method of a bismuth layered structure ferroelectric crystal having a weak coercive electric field Ec and a large residual polarization Pr. <P>SOLUTION: The production method includes: a step of forming a crystal (A) of a layered structure ferroelectric material containing bismuth by using at least one bismuth-supplying material selected from bismuth and bismuth compounds; and a heat treatment step of heat treating the crystal (A) in an environment wherein an oxygen partial pressure is not lower than 1 atmospheric pressure. The purity of bismuth included in the bismuth-supplying material is &ge;99.999 mol%. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010138066(A) 申请公布日期 2010.06.24
申请号 JP20100008082 申请日期 2010.01.18
申请人 JAPAN SCIENCE & TECHNOLOGY AGENCY 发明人 NOGUCHI YUJI;MIYAYAMA MASARU
分类号 C30B29/32;C30B29/22;C30B33/02;H01L21/8246;H01L27/105;H01L41/08;H01L41/09;H01L41/107;H01L41/113;H01L41/18;H01L41/187;H01L41/22;H01L41/257;H01L41/39;H01L41/41 主分类号 C30B29/32
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