发明名称 |
PRODUCTION METHOD OF FERROELECTRIC CRYSTAL HAVING BISMUTH LAYERED STRUCTURE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a production method of a bismuth layered structure ferroelectric crystal having a weak coercive electric field Ec and a large residual polarization Pr. <P>SOLUTION: The production method includes: a step of forming a crystal (A) of a layered structure ferroelectric material containing bismuth by using at least one bismuth-supplying material selected from bismuth and bismuth compounds; and a heat treatment step of heat treating the crystal (A) in an environment wherein an oxygen partial pressure is not lower than 1 atmospheric pressure. The purity of bismuth included in the bismuth-supplying material is ≥99.999 mol%. <P>COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010138066(A) |
申请公布日期 |
2010.06.24 |
申请号 |
JP20100008082 |
申请日期 |
2010.01.18 |
申请人 |
JAPAN SCIENCE & TECHNOLOGY AGENCY |
发明人 |
NOGUCHI YUJI;MIYAYAMA MASARU |
分类号 |
C30B29/32;C30B29/22;C30B33/02;H01L21/8246;H01L27/105;H01L41/08;H01L41/09;H01L41/107;H01L41/113;H01L41/18;H01L41/187;H01L41/22;H01L41/257;H01L41/39;H01L41/41 |
主分类号 |
C30B29/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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