发明名称 |
NAND FLASH MEMORY OF USING COMMON P-WELL AND METHOD OF OPERATING THE SAME |
摘要 |
A flash memory using hot carrier injection and a method of operating the same are provided. A plurality of strings constituting a page are formed on a single p-well and share the p-well. During a program operation, a string selection transistor is turned off, and electrons are accumulated in a source or drain region in response to a bias voltage applied to the p-well. Thereafter, the accumulated electrons are trapped in a charge trap layer of a memory cell in response to a program voltage applied through a word line. Also, during an erase operation, holes accumulated in response to a bias voltage applied to the p-well are trapped in the charge trap layer in response to an erase voltage. The flash memory performs NAND-type program and erase operations using hot carrier injection. |
申请公布号 |
WO2010030110(A3) |
申请公布日期 |
2010.06.24 |
申请号 |
WO2009KR05098 |
申请日期 |
2009.09.09 |
申请人 |
INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY;YOON, HAN-SUB;LEE, JONG-SUK;KWACK, KAE-DAL |
发明人 |
YOON, HAN-SUB;LEE, JONG-SUK;KWACK, KAE-DAL |
分类号 |
G11C16/02 |
主分类号 |
G11C16/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|