| 摘要 |
<p>The device (1) has an insulated gate zone (6) separated from an active zone (3) by an insulating layer (7). A floating gate zone (13) is formed in the active zone under a space (16) between a drain zone (4) and a source zone (5), where a concentration of defects in the floating gate zone is strictly greater than 10 power 18 per cubic centimeter. Deep levels are located to trap carriers corresponding to a doping such that a charge state of the floating gate zone is modified and a drain source current varies due to the presence of a supplementary potential on the floating gate zone.</p> |
