| 摘要 |
<P>PROBLEM TO BE SOLVED: To prepare various functions to a field effect transistor (FET) by controlling polarity not during manufacturing but in use, with respect to the bipolar field effect transistor and semiconductor integrated circuit apparatus. Ž<P>SOLUTION: On a channel region provided on a substrate, a gate electrode is provided, which controls the carrier density of the channel region, and at the same time, a voltage applying means which changes the polarity of the transistor seen from the gate electrode is provided. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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