| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of controlling a pH value and an oxidation-reduction potential of cleaning water and an apparatus, which are easily and accurately capable of controlling the pH value and oxidation-reduction potential (ORP) of the cleaning water by adding an adequate amount of gas component to the cleaning water via a gas pervious film for adding gas, in order to obtain a high cleaning effect of the cleaning water used for wet cleaning in the process of manufacturing a semiconductor base, a liquid crystal base, a magnetic base, or a superconductor base. Ž<P>SOLUTION: The pH value and oxidation-reduction potential of the cleaning water are controlled by adding the gas component to the cleaning water via the gas pervious film for adding gas. Hydrogenation water is used as cleaning water for wet cleaning in the process of manufacturing the semiconductor base, liquid crystal base, magnetic base, or superconductor base, and ammonia gas is used as a gas component to be added to the hydrogenation water. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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