发明名称 |
Method of Manufacturing a Semiconductor Device |
摘要 |
At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a single film forming chamber with the above film formation condition, crystallization is not sufficiently attained in a crystallization process. By forming the amorphous silicon film using silane gas diluted with hydrogen, crystallization is sufficiently attained in the crystallization process even with the continuous formation of the base film through the amorphous silicon film in the single film forming chamber.
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申请公布号 |
US2010151664(A1) |
申请公布日期 |
2010.06.17 |
申请号 |
US20100712397 |
申请日期 |
2010.02.25 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ASAMI TAKETOMI;ICHIJO MITSUHIRO;TORIUMI SATOSHI |
分类号 |
H01L21/205;H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L27/32;H01L29/786 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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