| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus and a plasma treatment method capable of easily ensuring uniformity in plasma without depending on the state of the plasma. <P>SOLUTION: The plasma etching apparatus generates plasma of a processing gas between an upper electrode 434 and a lower electrode 16 to apply plasma etching to a wafer W. In this apparatus, a high-frequency power source 48 and a variable DC power source 50 are connected to the upper electrode 434, and the upper electrode 434 has an electrode plate 536 and an electrode support member 438 in integrated structure for supporting the electrode plate 536. The electrode plate 536 has a distribution of predetermined electric resistance formed in an in-surface direction to form a distribution of a predetermined DC electric field and a high-frequency electric field on a surface of the upper electrode 434. <P>COPYRIGHT: (C)2010,JPO&INPIT |
