| 摘要 |
PURPOSE: A flash memory device and a manufacturing method the same are provided to improve the reliability of a memory device by forming a common source line by the same interval as the bit line. CONSTITUTION: An element isolation film and an active region are formed in a semiconductor substrate. A memory gate is formed on the active region. A control gate(20) is formed on the semiconductor substrate including the memory gate. All active regions are formed by the same interval as the bit line. A bridge(bridge)(25) is formed between the active regions so that the common source line is adjacent to the active region.
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