| 摘要 |
A method for making fine patterns by exploiting differences in threshold laser fluence of materials and a thin film transistor (TFT) fabrication method using the same; whereby layers of low threshold laser fluence are deposited onto substrates or other layers and can be selectively removed via laser irradiation, leaving cavities in fine patterns which can be filled with one of a variety of materials, most preferably conducting inks. In several embodiments, a plurality of cavities are formed leaving partitionsP, these cavities are then filled with conductive materials S,I/D,I to form source and drain electrodes then layered with an insulating layer, central partitions can then be removed and filled with materials such as semiconductors M to form a channel section, insulators U to form gate dielectrics and further conductive materials G,I to form a gate electrode, producing TFT devices. |
