发明名称 |
Non-volatile memory cells including fin structures |
摘要 |
A method of forming a non-volatile memory device may include forming a fin protruding from a substrate, forming a tunnel insulating layer on portions of the fin, and forming a floating gate on the tunnel insulting layer so that the tunnel insulating layer is between the floating gate and the fin. A dielectric layer may be formed on the floating gate so that the floating gate is between the dielectric layer and the fin, and a control gate electrode may be formed on the dielectric layer so that the dielectric layer is between the control gate and the fin. Related devices are also discussed.
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申请公布号 |
US7737485(B2) |
申请公布日期 |
2010.06.15 |
申请号 |
US20080193200 |
申请日期 |
2008.08.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO EUN-SUK;LEE CHOONG-HO;KIM TAE-YONG |
分类号 |
H01L29/94;H01L21/28;H01L21/336;H01L21/8247;H01L27/115;H01L29/423;H01L29/786;H01L29/788;H01L29/792 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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