| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor device for inhibiting an increase in a leakage current via a buffer layer to prevent degradation of characteristics. SOLUTION: The nitride semiconductor device has an insulator region 8A in an AlGaN layer 4. Thus, even if strain occurs in the buffer layer 2 due to heat, shock or the like to cause current to easily flow to the buffer layer 2, the insulator region 8A prevents the current from flowing as indicated by the dotted arrow (a) in Fig.1. Thus, the increase in the leakage current via the buffer layer 2 can be inhibited to prevent degradation in the characteristics. COPYRIGHT: (C)2010,JPO&INPIT
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