METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

<P>PROBLEM TO BE SOLVED: To obtain a method of manufacturing a semiconductor device, wherein a single crystal silicon layer having a small number of crystal defects and high crystallinity is formed on an insulating film; and to provide the semiconductor device. Ž<P>SOLUTION: The method of manufacturing the semiconductor device 101 has a step of forming the insulating film 2 on one side 1a of a substrate 1, a step of forming a hole 2c exposing the substrate 1 by opening the insulating film 2, a step of forming a crystal growth assisting film 3 so as to cover the inner wall surface of the hole 2c, a step of forming a noncrystal silicon layer so as to fill the hole 2c and to cover the side 2a opposite to the substrate of the insulating film 2, and a step of changing the noncrystal silicon layer to a single-crystal silicon layer 5 by a laser annealing method. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž