发明名称 Voltage clamp circuit and semiconductor device, overcurrent protection circuit, voltage measurement probe, voltage measurement device and semiconductor evaluation device respectively using the same
摘要 In a voltage clamp circuit, a normally-on type field-effect transistor having a negative threshold voltage has a drain connected to an input node, a source connected to an output node and grounded via a resistance element, and a gate supplied with an output voltage of a variable direct-current power supply. When a voltage at the output node becomes higher than a clamping voltage because of voltage drop of the resistance element, the field-effect transistor is tuned off. Accordingly, the output voltage is limited to be at most the clamping voltage. Thus, a response speed is higher than those of conventional voltage clamp circuits using diodes or the like.
申请公布号 US7733105(B2) 申请公布日期 2010.06.08
申请号 US20080139288 申请日期 2008.06.13
申请人 SHARP KABUSHIKI KAISHA 发明人 NOZAKI YOSHIAKI;KAWAMURA HIROSHI;TWYNAM JOHN KEVIN;HASEGAWA MASATOMO
分类号 G01R31/02 主分类号 G01R31/02
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