发明名称 Semiconductor device
摘要 Coupling reliability of a passive component is improved to increase the reliability of a semiconductor device. A first through hole is formed in a first electrode part of a first plate-like lead, and a second through hole is formed in a second electrode part of a second plate-like lead. As a result, at the first electrode part of the first plate-like lead, one external terminal of the passive component can be coupled to the first electrode parts on both sides of the first through hole while being laid across the first through hole. Also, at the second electrode part of the second plate-like lead, the other external terminal of the passive component can be coupled to the second electrode parts on both sides of the second through hole while being laid across the second through hole. Accordingly, at central portions both in the longitudinal and width directions of the passive component, the passive component is surrounded by sealing members. As a result, thermal stress applied to jointing materials such as solder can be reduced, improving the reliability of the semiconductor device (semiconductor package).
申请公布号 US7732919(B2) 申请公布日期 2010.06.08
申请号 US20090362354 申请日期 2009.01.29
申请人 RENESAS TECHNOLOGY CORP. 发明人 SHIMIZU ICHIO;KAWANO KENYA;ASHIDA KISHO;MACHIDA YUICHI
分类号 H01L23/34 主分类号 H01L23/34
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