METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A manufacturing method of a semiconductor substrate and a semiconductor device are provided to improve productivity with increasing a playback number of the semiconductor substrate using a first mono crystalline semiconductor layer into a seed layer repeatedly. CONSTITUTION: A first mono crystalline semiconductor layer(103) is formed on a first substrate(101). A second mono crystalline semiconductor layer(104) is formed on the first mono crystalline semiconductor layer. The first substrate and a second substrate(106) are welded each other with leaving an insulating layer(105) in interval. The first mono crystalline semiconductor layer and the second mono crystalline semiconductor layer are formed between the first substrate and the second substrate. The first substrate and the second substrate are separated each other between the first mono crystalline semiconductor layer and the second mono crystalline semiconductor layer.