| 摘要 |
PURPOSE: A method for manufacturing of a semiconductor device is provided to obtain a high conductivity and thermal stability by forming a metal pad for a wire bonding with a copper - aluminum alloy. CONSTITUTION: A passivation layer(103) is formed over a semiconductor substrate. The passivation film is etched to form a trench for exposing the metal wire. A barrier film(105) is formed inside the trench. A metal pad(107) of the copper - aluminum alloy is formed on the trench and the barrier film. A protective film(108) is formed on the metal pad. |
