| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon wafer defect inspection device for appropriately and clearly detecting a defect even where it is in a polycrystalline silicon wafer. SOLUTION: This inspection device includes an infrared laser light source 1 for applying an infrared laser beam to an inspected body 7, a hollow light receiving unit 2 with an opening 4 for receiving the laser beam passing through the inspected body 7 and diffusing the laser beam therewithin, and an infrared detection sensor 3 for detecting the light amount of the laser beam passing through the inspected body 7 with its detector exposed in a space 2b of the receiving unit 2. The laser beam passes through the inspected body 7, enters the receiving unit 2 through the opening 4, and is diffused within the receiving unit 2. The light amount of the laser beam is detected by the detection sensor 3, causing a bright-and-dark pattern of grain boundaries 7a of crystals of the polycrystalline silicon wafer to be remarkably reduced in converting detection results into images, and allowing the defect to be clearly detected. COPYRIGHT: (C)2010,JPO&INPIT |
