发明名称 Structure for preventing gap formation and plasma processing equipment having the same
摘要 Plasma processing equipment having a structure for preventing gap formation includes: a chamber inside which a plasma environment is formed; an upper electrode positioned at a upper position of the chamber; an electrostatic chuck positioned at a lower position of the electrostatic chuck, having a lower electrode and holding a wafer on a top surface thereof; a ring positioned at an outer side of the electrostatic chuck; and a gap prevention unit for isolating from the outside a space between the electrostatic chuck and the ring.
申请公布号 US7727354(B2) 申请公布日期 2010.06.01
申请号 US20080971568 申请日期 2008.01.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK EUI-JIN;CHOI YUN-HO;PARK IN-YOUNG;JEONG HWAN-IL;CHOI SUNG-SOK
分类号 C23F1/00;C23C16/00;H01L21/306 主分类号 C23F1/00
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