发明名称 |
Structure for preventing gap formation and plasma processing equipment having the same |
摘要 |
Plasma processing equipment having a structure for preventing gap formation includes: a chamber inside which a plasma environment is formed; an upper electrode positioned at a upper position of the chamber; an electrostatic chuck positioned at a lower position of the electrostatic chuck, having a lower electrode and holding a wafer on a top surface thereof; a ring positioned at an outer side of the electrostatic chuck; and a gap prevention unit for isolating from the outside a space between the electrostatic chuck and the ring.
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申请公布号 |
US7727354(B2) |
申请公布日期 |
2010.06.01 |
申请号 |
US20080971568 |
申请日期 |
2008.01.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK EUI-JIN;CHOI YUN-HO;PARK IN-YOUNG;JEONG HWAN-IL;CHOI SUNG-SOK |
分类号 |
C23F1/00;C23C16/00;H01L21/306 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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