发明名称 |
Protective structure for semiconductor sensors |
摘要 |
A protective structure for a semiconductor sensor integrated in a semiconductor substrate for use in a state that is in direct contact with a measuring medium has a semiconducting layer that is applied to the semiconductor substrate, a metal layer and an insulating layer. The insulating layer is disposed between the semiconducting layer and the metal layer and electrically insulates same.
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申请公布号 |
US7728363(B2) |
申请公布日期 |
2010.06.01 |
申请号 |
US20070936962 |
申请日期 |
2007.11.08 |
申请人 |
FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. |
发明人 |
SORGE STEPHAN;KUNATH CHRISTIAN;KURTH EBERHARD |
分类号 |
H01L29/68 |
主分类号 |
H01L29/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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