发明名称 Protective structure for semiconductor sensors
摘要 A protective structure for a semiconductor sensor integrated in a semiconductor substrate for use in a state that is in direct contact with a measuring medium has a semiconducting layer that is applied to the semiconductor substrate, a metal layer and an insulating layer. The insulating layer is disposed between the semiconducting layer and the metal layer and electrically insulates same.
申请公布号 US7728363(B2) 申请公布日期 2010.06.01
申请号 US20070936962 申请日期 2007.11.08
申请人 FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. 发明人 SORGE STEPHAN;KUNATH CHRISTIAN;KURTH EBERHARD
分类号 H01L29/68 主分类号 H01L29/68
代理机构 代理人
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