| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device contributing to an improvement in yield in addition to a reduction in test time. SOLUTION: The semiconductor storage device includes: a reference voltage creating circuit 10 for generating a plate voltage to be supplied to a memory cell array; a plate voltage supplying terminal 20 for supplying the plate voltage from the outside; and a switching circuit 30 for switching the supply of the plate voltage from the plate voltage creating circuit and the supply of the plate voltage from the outside through the above plate voltage supplying terminal. COPYRIGHT: (C)2010,JPO&INPIT |
