METHOD FOR CORRECTING PATTERN OF PHOTOMASK AND METHOD FOR MANUFACTURING PHOTOMASK, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, PATTERN CORRECTION DEVICE AND PROGRAM

摘要

PROBLEM TO BE SOLVED: To reduce the number of times of correction in optical proximity correction.

SOLUTION: The process of correcting an optical proximity effect includes steps of: creating a first corrected data by carrying out at least once a first optical proximity correction on a design data in accordance with a correction model having a first parameter; and creating a second corrected data showing a real pattern, by carrying out a second optical proximity correction on the first corrected data in accordance with a correction model having a different value for the first parameter from that of the first optical proximity correction.

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