发明名称 |
Vertical cavity surface-emitting laser diode having a spacer for effective diffusion of holes between p-type electrode and active layer, and method for manufacturing the same |
摘要 |
<p>A GaN series surface-emitting laser diode and a method for manufacturing the same are provided. The GaN series surface-emitting laser diode includes: an active layer; p-type and n-type material layers on opposite sides of the active layer; a first distributed Bragg reflector (DBR) layer formed on the n-type material layer; an n-type electrode connected to the active layer through the n-type material layer such that voltage is applied to the active layer for lasing; a spacer formed on the p-type material layer with a laser output window in a portion aligned with the first DBR layer, the spacer being thick enough to enable holes to effectively migrate to a center portion of the active layer; a second BDR layer formed on the laser output window; and a p-type electrode connected to the active layer through the p-type material layer such that voltage is applied to the active layer for lasing. The laser output window is shaped such that diffraction of a laser beam caused by the formation of the spacer can be compensated for. <IMAGE></p> |
申请公布号 |
EP1233493(B1) |
申请公布日期 |
2010.05.26 |
申请号 |
EP20020250606 |
申请日期 |
2002.01.29 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO. LTD. |
发明人 |
PARK, YONG-JO;JEON, HEON-SU;HA, KYOUNG-HO;PARK, SI-HYUN |
分类号 |
H01S5/183;H01S5/00;H01S5/042;H01S5/10;H01S5/18;H01S5/323;H01S5/343 |
主分类号 |
H01S5/183 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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