发明名称 |
Reduction of hillocks prior to dielectric barrier deposition in Cu damascene |
摘要 |
Unwanted hillocks arising in copper layers due to formation of overlying barrier layers may be significantly reduced by optimizing various process parameters, alone or in combination. A first set of process parameters may be controlled to pre-condition the processing chamber in which the barrier layer is deposited. A second set of process parameters may be controlled to minimize energy to which a copper layer is exposed during removal of CuO prior to barrier deposition. A third set of process parameters may be controlled to minimize the thermal budget after removal of the copper oxide.
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申请公布号 |
US7723228(B2) |
申请公布日期 |
2010.05.25 |
申请号 |
US20030442359 |
申请日期 |
2003.05.20 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
RAJAGOPALAN NAGARAJAN;SHEK MEIYEE;HUANG KEGANG;KIM BOK HOEN;M'SAAD HICHEM;NOWAK THOMAS |
分类号 |
H01L21/4763;H01L21/02;H01L21/306;H01L21/318;H01L21/321;H01L21/3213;H01L21/768 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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