| 摘要 |
A LDMOS transistor and a method for manufacturing the same are disclosed. A lateral double diffused metal oxide semiconductor (LDMOS) transistor includes a first dielectric layer formed on a top surface of a substrate; a plurality of second dielectric layers on a top surface of the first dielectric layer; a plurality of contact plugs spaced apart by a predetermined distance in an active region of the substrate, passing through the first and second dielectric layers; and a bridge metal line formed in the second dielectric layers, inter-connecting the contact plugs in a horizontal direction. The bridge metal line formed to inter-connect the contact plugs allows for more current to flow in the presently disclosed LDMOS transistor than in a conventional LDMOS transistor of identical size.
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