发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR COMPONENT
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor component, which can suppress, in solder joint using reductive gas, bubbles generated in a solder layer after joint. SOLUTION: The method for manufacturing a semiconductor component includes steps of: heating a semiconductor component 2 obtained by assembling conductive members 11a-11c to a semiconductor device 13 through a solder material 12 at a non-melting temperature where formic acid reduction progresses in an inert gas atmosphere including formic acid vapor, and the solder material 12 does not melt; decompressing the inert gas atmosphere while heating the semiconductor component 2 at the non-melting temperature; heating the semiconductor component 2 heated at the non-melting temperature at a melting temperature where the solder material 12 melts while decompressing the inert gas atmosphere; and returning the inert gas atmosphere to the atmospheric pressure by inflow of inert gas to the atmosphere in a state where the solder material 12 is melted, and cooling the semiconductor component 2 to solidify the solder material 12. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010114197(A) 申请公布日期 2010.05.20
申请号 JP20080284271 申请日期 2008.11.05
申请人 TOSHIBA CORP 发明人 YOSHIOKA SHINPEI;FUKUYOSHI HIROSHI;WATANABE NAOTAKE
分类号 H01L21/52;H01L23/40;H05K3/34 主分类号 H01L21/52
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