PHASE CHANGE MEMORY DEVICE AND VERIFICATION METHOD OF PROGRAMMING CURRENT FOR IT

摘要

PURPOSE: A phase change memory device and a verification method thereof are provided to program data by recognizing a programming current applying condition due to the property difference of a phase change memory cell. CONSTITUTION: A data reading part(320) reads data programmed in a phase change memory cell. A comparison part(330) compares output data outputted from the data reading part with applied test data. A write control part outputs a first and a second write control signal corresponding to test data. The write control part(340) activates and outputs a bias signal when two data are different from each other after the comparison. A data writing part(350) supplies a programming current to the phase change memory cell in response to the first and the second write control signal.