| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an apparatus and a method for manufacturing a silicon carbide single crystal, which promote more homogeneous crystal growth. Ž<P>SOLUTION: In the method for manufacturing a silicon carbide single crystal in which a raw material for sublimation 80 is heated to sublime the raw material for sublimation 80, and the sublimed raw material for sublimation 80 is recrystallized on a seed crystal 70 to manufacture a silicon carbide single crystal, at least a part of the raw material for sublimation 80 is of a cylindrical shape having a hollow portion formed, and the seed crystal 70 is disposed in the hollow portion of the raw material for sublimation 80. The positional relationship between the seed crystal 70 and the raw material for sublimation 80 is such that a heating position which varies along the extending direction of the hollow portion with the elapse of the heating time by an induction heating coil 30 and is heated at a predetermined temperature by the induction heating coil 30 moves along with the position of the seed crystal 70. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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