USING BORON-CONTAINING COMPOUNDS, GASSES AND FLUIDS DURING AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS
摘要
<p>Boron-containing compounds, gasses and fluids are used during ammonothermal growth of group-Ill nitride crystals. Boron-containing compounds are used as impurity getters during the ammonothermal growth of group-Ill nitride crystals. In addition, a boron-containing gas and/or supercritical fluid is used for enhanced solubility of group- Ill nitride into said fluid.</p>
申请公布号
WO2010053960(A1)
申请公布日期
2010.05.14
申请号
WO2009US63233
申请日期
2009.11.04
申请人
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;PIMPUTKAR, SIDDHA;KAMBER, DERRICK, S.;SPECK, JAMES, S.;NAKAMURA, SHUJI
