PLASMA AND THERMAL ANNEAL TREATMENT TO IMPROVE OXIDATION RESISTANCE OF METAL-CONTAINING FILMS
摘要
Method and apparatus are provided for treatment of a deposited material layer. In one embodiment, a method is provided for processing a substrate including depositing a metal-containing layer using an atomic layer deposition technique, exposing the metal-containing layer to a plasma treatment process at a temperature of less than about 200°C, and exposing the metal-containing layer to a thermal anneal process at a temperature of about 600°C or greater. The plasma treatment process and/or the thermal anneal process may use a nitrating gas, which may form a passivating surface or layer with the metal-containing layer.
申请公布号
WO2010054075(A2)
申请公布日期
2010.05.14
申请号
WO2009US63393
申请日期
2009.11.05
申请人
APPLIED MATERIALS, INC.;TJANDRA, AGUS, SOFIAN;YOKOTA, YOSHITAKA;OLSEN, CHRISTOPER, S.
发明人
TJANDRA, AGUS, SOFIAN;YOKOTA, YOSHITAKA;OLSEN, CHRISTOPER, S.